Zinc oxide single crystal silicon materials and optoelectronic devices research - Business - Sales

Short wavelength optoelectronic integrated with Si microelectronics applications because of its great value has been widespread concern, including silicon-based materials and optoelectronic devices of ZnO is an important topic in the international arena; However, high-quality ZnO single crystal Si-based Materials, device structure design and other issues of great challenge,zinc oxide supplier, this is because the Si surface is highly active, easy to form amorphous oxide and silicide, hinder the epitaxial growth of ZnO. In addition, because the energy band structure of Si and ZnO do not match, hardly an ideal performance of optoelectronic devices. Therefore, how to control the Si substrate surface and the ZnO / Si heterojunction interface, and designing a new device structure has become the core of this research scientific problems. Institute of Physics, Chinese Academy of Sciences / Beijing National Laboratory for Condensed Matter Physics, DU Xiao-long study group after mo re than five years of continuous research studies, developed a low-temperature interface engineering and design and build further sharp interface with the new n-ZnO / i-MgO/p-Si double heterojunction pin UV detector structure developed Si-based visible-blind UV detectors principle ZnO-based devices.Since 2004, Zeng-Xia Mei Wang Xina Research Associate and PhD students, Wang Yong and other systems of the Si (111)-7x7 clean surface, the deposition process of metal Mg thin layer, found only at low temperatures can inhibit the interface of Si and Mg atoms interdiffusion and the formation of Mg (0001) single crystal film, and further study found that the Mg single crystal films formed by reactive oxygen species processing rock salt phase of MgO (111) ultra thin film, thus the growth of ZnO epitaxial two-step method provides a good template; Through a series of growth parameters of the optimization, using MBE method finally prepared 2-inch Si wafer high-quality ZnO single crystal thin films, the crystallinity and optical properties of composite indicators such as leading level; related Applied Physics Letters paper was trial issued as the most senior person "EXCELLENT" (APL, 90, 151912 (2007)), reviews that this is an outstanding research paper in order to show conclusive evidence of a Si substrate in a single preparation of ZnO The mechanism of crystal film and method, and oxidation was described using Mg MgO interface technology can be applied to other heterogeneous membranes of silicon. The original low-temperature interface engineering has an international patent applications, both domestic patents (one of the authorized (ZL200610064977.5)). This work is Tsinghua University Qikun Academy of Sciences, Professor Jia Jinfeng, Beijing Polytechnic University and Chinese Academy of Sciences Academician Zhang Ze Wei Lu the discussion group co-researcher completed.In Si-based ZnO single crystal thin films based on breakthrough technology, DU Xiao-long st udy group to further develop the Si-based optoelectronic device application of ZnO. Recently, the group of Yang Guo and Tian-Chong doctoral Research Associate with the micro-processing laboratories and other long-Zhi Gu Study Group to design and prepare a new n-ZnO/i-MgO/p-Si double heterojunction pin visible blind Principle-based UV detector device. The device has good characteristics of pn junction rectifier, rectifier when the 2V or more than to 104. Study found that ZnO / Si intermediate layer into the MgO barrier and effectively inhibits the response of silicon on visible light, the device is only higher than the ZnO band gap (380nm) UV response, which has a visible blind UV detection. With commercially available silicon ultraviolet detector compared to the full use of the wide bandgap device ZnO excellent optical properties, UV response to strong, and can work directly in the context of visible light, no filter system to shield the visible light response, which is sim ple in structure, superior performance advantages. Preparation of related devices have been applied for national invention patent (application number: 200810227958.9), the related research work has recently been published in "Applied Physics Letters" on (APL, 94,zinc oxide, 113508 (2009)). Since the growth of ZnO low temperature Si plane with sophisticated technology-compatible Si-based ZnO system provides a way to electrical,zinc oxide wholesaler, optical and acoustic devices monolithically integrated approach, the potential value of large. Physics original zinc oxide single crystal silicon material growth technology and device structure design and preparation of new technology for our country in the field of optoelectronic technology innovation on the opening of a new path. The study was the CAS Knowledge Innovation Project of the National Natural Science Foundation of projects and funding MOST projects.Source:

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